f e a t ur e s low cost diffused juncton low leakage low forward voltage drop high current capability and similar solvents m e chan i cal da t a case:jedec do--15,molded plastic terminals: axial lead ,solderable per mil- std-202,method 208 polarity: color band denotes cathode weight: 0.014 ounces,0.39 grams mounting position: any m a x i m um r a t i n g s a nd e l e c t r i c a l ch a r a c t e r i s t i cs ratings at 25 ambient temperature unless otherwise specified. single phase,half wave,60 hz,resistive or inductive load. for capacitive load,derate by 20%. 1s 18 8 7 1s 18 8 8 un i t s maximum recurrent peak reverse voltage v rrm 400 600 v max imum rms v olt age v rms 280 420 v maximum dc blocking voltage v dc 400 600 v maximum average forw ard rectified current 9.5mm lead length, @t a =75 peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @t j =125 maximum instantaneous forw ard voltage @ 1.5 a v f v maximum reverse current @t a =25 at rated dc blocking voltage @t a =100 typical junction capacitance (note1) c j p f typical thermal resistance (note2) r ja /w operating junction temperature range t j storage temperature range t stg i r 200 140 v o l t a g e r a n g e: 1 0 0 --- 60 0 v curr e n t : 1 . 0 a 200 1s 18 8 6 a 5.0 easily cleaned with freon,alcohol,isopropanol i f(av) 1.0 the plastic material carries u/l recognition 94v-0 a 60.0 i fsm 20 1.2 40 2. thermal resistance f rom junction to ambient. a 50.0 note: 1. measured at 1.0mhz and applied rev erse v oltage of 4.0v dc. - 55 ---- + 150 - 55---- + 150 1 s1885 (z) - - -1s1888 (z) d o - 1 5 100 70 100 1s 18 8 5 pl a s t i c s i l i c o n r e c t i f i er dimensions in millimeters diode semiconductor korea www.diode.kr
75 25 0 50 single phase half wave 60h z resistive or inductive load 025 .50 1.25 .75 1.00 1.50 100 12 5 175 150 1 2 4 10 820406080 100 0 t j =125 ?? 8.3ms single half sine-wave 20 40 60 80 t j =25 pulse width=300us 1 . 61 . 4 1 . 2 1 . 00 . 80 . 6 2 4 10 0 . 01 0 . 02 0 . 04 0 . 06 0 . 1 0 . 2 0 . 4 1 . 0 100 .2 2 1 .1 4 .4 1.0 2 40 10 20 60 100 4 10 20 40 100 f=1mhz t j =25 amperes junction capacitance,pf average forward current, amperes 1S1885 (z) - - -1s1888 (z) i n s t a n t a n e o u s f o r w a r d v o l t a g e , v o l t s r eve r se v o l t a g e , v o l t s number of cycles at 60hz fi g. 1 -- typi cal forward characteri sti cs fi g. 2 -- typi cal juncti on capaci tance peak forward surge current, amperes instantaneous forward current fi g. 3 -- peak forward surge current fi g. 4 -- forward derati ng curve ambient temperature, www.diode.kr diode semiconductor korea
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